NTLJS17D0P03P8ZTAG
MOSFET P-CH 30V 7A 6PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTLJS17D0P03P8ZTAG is a P-Channel MOSFET designed for demanding applications requiring efficient power switching. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7A at 25°C. With a low on-resistance (Rds On) of 11.3mOhm at 10A and 10V, it minimizes conduction losses. The device is housed in a compact 6-PQFN (2x2) surface-mount package, delivering a maximum power dissipation of 860mW (Ta). Key electrical characteristics include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1600 pF at 15V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±25V. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
