NTLJS1102PTAG
MOSFET P-CH 8V 3.7A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS1102PTAG is a P-Channel MOSFET from the µCool™ series, designed for efficient power management. This device features an 8 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.7 A at 25°C. It boasts a low on-resistance of 36 mOhm at 6.2 A and 4.5 V, with a gate threshold voltage of 720 mV at 250 µA. The NTLJS1102PTAG has a maximum gate-source voltage of ±6 V and a gate charge of 25 nC at 4.5 V, with input capacitance of 1585 pF at 4 V. Packaged in a compact 6-WDFN (2x2) with an exposed pad for enhanced thermal performance, this MOSFET offers a maximum power dissipation of 700 mW (Ta). Operating across a temperature range of -55°C to 150°C (TJ), it is suitable for applications in consumer electronics and power supply designs.
Additional Information
Series: µCool™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 720mV @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 4 V |
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