NTLJF3118NTAG
MOSFET N-CH 20V 2.6A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJF3118NTAG is an N-Channel Power MOSFET designed for demanding applications. This device features a 20 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 2.6 A at 25°C (Ta). With a low on-resistance of 65 mOhm at 3.8 A and 4.5 Vgs, it minimizes conduction losses. The NTLJF3118NTAG utilizes a 6-WDFN (2x2) exposed pad package for efficient thermal dissipation, supporting a maximum power dissipation of 700 mW (Ta). Key electrical characteristics include a gate charge of 3.7 nC at 4.5 V and an input capacitance of 271 pF at 10 V. The MOSFET is equipped with an integrated Schottky diode for enhanced performance. This component is suitable for use in power management, consumer electronics, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.8A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 271 pF @ 10 V |
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