NTLJF3117PTAG
MOSFET P-CH 20V 2.3A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJF3117PTAG is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C. With a maximum on-resistance (Rds On) of 100mOhm at 2A and 4.5V, it offers efficient power switching. The NTLJF3117PTAG includes an integrated Schottky diode for enhanced performance and a low gate charge of 6.2 nC at 4.5V. Its 6-WDFN (2x2) exposed pad package facilitates effective thermal management, with a maximum power dissipation of 710mW (Ta). This component is suitable for use in automotive and industrial applications requiring robust power control. The MOSFET operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 531 pF @ 10 V |
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