NTLJD3182FZTAG
MOSFET P-CH 20V 2.2A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJD3182FZTAG is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.2A at 25°C, with a maximum power dissipation of 710mW (Ta). The Rds(On) is specified at 100mOhm maximum at 2A and 4.5V gate drive. The device includes an integrated Schottky diode for enhanced performance. It is supplied in a compact 6-WDFN (2x2) package with an exposed pad, suitable for surface mounting. Key electrical parameters include a Gate Charge (Qg) of 7.8 nC at 4.5V and an Input Capacitance (Ciss) of 450 pF at 10V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V |
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