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NTLGF3501NT1G

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NTLGF3501NT1G

MOSFET N-CH 20V 2.8A 6DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLGF3501NT1G is an N-Channel MOSFET from the FETKY™ series. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.8A at 25°C, with a maximum power dissipation of 1.14W under the same conditions. The MOSFET exhibits a maximum On-Resistance (Rds On) of 90mOhm at 3.4A and a Vgs of 4.5V. It is designed for surface mounting within a 6-DFN (3x3) package. Key electrical parameters include a Gate Charge (Qg) of 10 nC at 4.5V and an input capacitance (Ciss) of 275 pF at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for applications requiring efficient switching and low on-resistance, often found in power management and conversion circuits across various industries.

Additional Information

Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 3.4A, 4.5V
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 10 V

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