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NTLGF3402PT1G

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NTLGF3402PT1G

MOSFET P-CH 20V 2.3A 6DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLGF3402PT1G is a P-Channel, 20V MOSFET designed for efficient power switching applications. This FETKY™ series device features a low Rds(on) of 140mOhm at 2.7A and 4.5V Vgs, contributing to reduced conduction losses. It supports a continuous drain current of 2.3A (Ta) with a maximum power dissipation of 1.14W (Ta). The device is housed in a 6-DFN (3x3) package with an exposed pad, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 10 nC at 4.5V and input capacitance (Ciss) of 350 pF at 10V Vds. The NTLGF3402PT1G operates across an extended temperature range from -55°C to 150°C (TJ). This component finds application in areas such as power management, battery charging, and general-purpose switching in consumer electronics and industrial systems.

Additional Information

Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Rds On (Max) @ Id, Vgs140mOhm @ 2.7A, 4.5V
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 10 V

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