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NTJS4405NT4G

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NTJS4405NT4G

MOSFET N-CH 25V 1A SC88/SC70-6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTJS4405NT4G is a 25 V N-Channel MOSFET designed for surface mount applications. This component offers a continuous drain current (Id) of 1A (Ta) with a maximum power dissipation of 630mW (Ta). The on-resistance (Rds On) is specified at 350mOhm maximum at 600mA drain current and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 1.5 nC at 4.5V and input capacitance (Ciss) of 60 pF at 10V. The device operates over an extended temperature range of -55°C to 150°C (TJ) and is supplied in a compact SC-88/SC70-6/SOT-363 package. This MOSFET is suitable for use in portable electronics and power management circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs350mOhm @ 600mA, 4.5V
FET Feature-
Power Dissipation (Max)630mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88/SC70-6/SOT-363
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V

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