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NTJS4405NT1

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NTJS4405NT1

MOSFET N-CH 25V 1A SC88/SC70-6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTJS4405NT1 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) capability of 1 A at 25°C. With a maximum On-Resistance (Rds On) of 350 mOhms at 600 mA and 4.5 V gate drive, it offers efficient switching. The device utilizes a Metal Oxide semiconductor technology and is housed in a compact SC-88/SC70-6/SOT-363 surface mount package, suitable for space-constrained designs. Key parameters include a maximum power dissipation of 630 mW (Ta) and a gate charge (Qg) of 1.5 nC at 4.5 V. Operating temperatures range from -55°C to 150°C (TJ). This MOSFET is commonly employed in consumer electronics and industrial automation systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs350mOhm @ 600mA, 4.5V
FET Feature-
Power Dissipation (Max)630mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88/SC70-6/SOT-363
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V

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