NTJS4160NT1G
MOSFET N-CH 30V 1.8A SC88/SC70-6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTJS4160NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 1.8A at 25°C. With a maximum Rds(on) of 60mOhm at 2.6A and 10V Vgs, it offers efficient switching characteristics. The device is housed in a compact 6-TSSOP, SC-88, SOT-363 package, suitable for surface mount assembly. Key parameters include a gate charge (Qg) of 2.75 nC at 4.5V and input capacitance (Ciss) of 230 pF at 10V. The NTJS4160NT1G operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. This MOSFET is commonly utilized in power management circuits, automotive systems, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.75 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
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