NTJS3157NT4G
MOSFET N-CH 20V 3.2A SC88/SC70-6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTJS3157NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and supports a continuous drain current (Id) of up to 3.2A at 25°C, with a maximum power dissipation of 1W (Ta). The low on-resistance of 60mOhm is achieved at 4A and 4.5V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 4.5V and an input capacitance (Ciss) of 500 pF at 10V. The NTJS3157NT4G operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in a compact 6-TSSOP, SC-88, SOT-363 package, making it suitable for surface mounting. Drive voltages range from 1.8V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. This MOSFET is utilized in various industries including consumer electronics and industrial automation. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
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