NTJS3151PT2
MOSFET P-CH 12V 2.7A SC88/SC70-6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTJS3151PT2 is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a 12 V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 2.7 A at 25°C, with a maximum power dissipation of 625 mW. The Rds(On) is specified at a maximum of 60 mOhm at 3.3 A and 4.5 V gate drive. It offers flexible gate drive options with a threshold voltage (Vgs(th)) of 1.2 V at 100 µA and a maximum gate-source voltage (Vgs) of ±12 V. Key parameters include a gate charge (Qg) of 8.6 nC at 4.5 V and an input capacitance (Ciss) of 850 pF at 12 V. The NTJS3151PT2 is packaged in a compact 6-TSSOP, SC-88, SOT-363 (SC-88/SC70-6) surface-mount configuration, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and portable electronics sectors.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 12 V |
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