NTHS5445T1
MOSFET P-CH 8V 5.2A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5445T1 is a P-Channel MOSFET designed for efficient switching applications. This ChipFET™ housed in an 8-SMD, Flat Leads package offers a Drain-to-Source Voltage (Vdss) of 8 V and a continuous drain current (Id) of 5.2 A at 25°C. Key performance specifications include a maximum Rds(On) of 35 mOhm at 5.2 A and 4.5 V Vgs, along with a gate charge (Qg) of 26 nC at 4.5 V. The device supports a gate-source voltage range of ±8 V and features a threshold voltage (Vgs(th)) of 450 mV at 250 µA. With a maximum power dissipation of 1.3 W (Ta), it is suitable for operation across a temperature range of -55°C to 150°C. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
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