NTHS5443T1G
MOSFET P-CH 20V 3.6A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5443T1G is a P-Channel MOSFET designed for surface mount applications. This ChipFET™ device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 3.6 A at 25°C. The Rds On is specified at a maximum of 65 mOhm at 3.6 A and 4.5 V Vgs. Key parameters include a Gate Charge (Qg) of 12 nC at 4.5 V and a Vgs(th) of 600 mV at 250 µA. With a maximum power dissipation of 1.3 W (Ta) and an operating junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications. The 8-SMD, Flat Leads package is supplied on tape and reel. This component finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
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