NTHS5441T1G
MOSFET P-CH 20V 3.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5441T1G is a P-Channel MOSFET designed for surface mount applications. This ChipFET™ device features a 20 V drain-source voltage (Vdss) and can handle a continuous drain current of 3.9 A at 25°C. Its low on-resistance, specified as 46 mOhm maximum at 3.9 A and 4.5 V gate-source voltage, makes it suitable for power switching applications. With a gate charge of 22 nC maximum at 4.5 V and input capacitance of 710 pF maximum at 5 V, the NTHS5441T1G offers efficient switching characteristics. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.3 W. The 8-SMD, Flat Leads package is supplied in tape and reel. This component finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 5 V |
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