NTHS5441T1
MOSFET P-CH 20V 3.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5441T1 is a P-Channel MOSFET designed for high-efficiency power management applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) of 3.9 A at 25°C. With a low on-resistance (Rds On) of 46 mOhm at 3.9 A and 4.5 V, it minimizes conduction losses. The device has a typical gate charge (Qg) of 22 nC at 4.5 V and an input capacitance (Ciss) of 710 pF at 5 V. The threshold voltage (Vgs(th)) is a maximum of 1.2 V at 250µA. Packaged in a ChipFET™ (8-SMD, Flat Leads) for surface mounting, the NTHS5441T1 is suitable for use in consumer electronics and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 5 V |