NTHS5404T1
MOSFET N-CH 20V 5.2A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5404T1 is an N-Channel MOSFET designed for efficient power switching applications. Featuring a 20 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.2 A at 25°C (Ta), this device is built upon advanced MOSFET technology. Its low on-resistance is achievable with gate-source voltages as low as 2.5 V, with a maximum of 4.5 V specified for optimal performance. The gate charge (Qg) is rated at a maximum of 18 nC at 4.5 V, indicating low switching losses. Mounted in an 8-SMD, Flat Lead ChipFET™ package, it is suitable for surface mounting. Operating across a wide temperature range from -55°C to 150°C (TJ), this component finds application in automotive and industrial power management systems. Its maximum gate-source voltage is ±12V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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