NTHS5402T1
MOSFET N-CH 30V 4.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS5402T1 is an N-Channel MOSFET designed for surface mount applications. Featuring a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 4.9A at 25°C, this component offers a maximum Rds On of 35mOhm at 4.9A and 10V Vgs. With a gate charge (Qg) of 20 nC at 10V, it operates within a temperature range of -55°C to 150°C. The ChipFET™ package, supplied on Tape & Reel (TR), is suitable for power management and switching applications across various industries. Its technology is based on Metal Oxide, with a gate-source voltage tolerance of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. The maximum power dissipation is 1.3W.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
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