NTHS4501NT1
MOSFET N-CH 30V 4.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS4501NT1 is an N-Channel MOSFET designed for general-purpose switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.9A at 25°C. The Rds(On) is specified at a maximum of 38mOhm at 4.9A and 10V gate-source voltage. The device utilizes ChipFET™ packaging for efficient thermal management, with a maximum power dissipation of 1.3W. Key electrical characteristics include a maximum gate charge (Qg) of 9.1 nC at 10V and an input capacitance (Ciss) of 462 pF at 24V. Operating temperature range is from -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 462 pF @ 24 V |
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