NTHS4166NT1G
MOSFET N-CH 30V 4.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS4166NT1G is an N-Channel MOSFET designed for efficient power switching. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 4.9 A at 25°C. The Rds On is specified at a maximum of 22 mOhm at 4.9 A and 10 V gate drive. With a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 900 pF at 15 V, it offers optimized switching performance. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 800 mW. It is provided in an 8-SMD, Flat Leads ChipFET™ package, suitable for surface mounting. This MOSFET is commonly utilized in industrial, automotive, and consumer electronics applications where efficient power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 15 V |
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