NTHS4111PT1G
MOSFET P-CH 30V 3.3A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHS4111PT1G is a P-Channel MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3.3A at 25°C ambient temperature. The Rds(On) is specified at a maximum of 45mOhm at 4.4A and 10V Vgs. With a Gate Charge (Qg) of 28 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 1500 pF maximum at 24V Vds, it offers competitive switching characteristics. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. It is supplied in a ChipFET™ package, specifically an 8-SMD, Flat Leads configuration, suitable for surface mounting. This component finds application in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 24 V |
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