NTHS2101PT1G
MOSFET P-CH 8V 5.4A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTHS2101PT1G is a P-Channel MOSFET designed for power management applications. This component features an 8 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 5.4 A at 25°C (Tj), with a maximum power dissipation of 1.3 W (Ta). The NTHS2101PT1G exhibits a low on-resistance of 25 mOhm at 5.4 A and 4.5 V (Vgs). It supports drive voltages from 1.8 V to 4.5 V. Key parameters include a gate charge (Qg) of 30 nC at 4.5 V and input capacitance (Ciss) of 2400 pF at 6.4 V (Vds). The device is packaged in an 8-SMD, Flat Leads ChipFET™ for surface mounting and is supplied on Tape & Reel. This MOSFET is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 6.4 V |
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