NTHS2101PT1
MOSFET P-CH 8V 5.4A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTHS2101PT1 is a P-Channel MOSFET in a ChipFET™ package, offering an 8V drain-source voltage (Vdss). This component features a continuous drain current (Id) of 5.4A at 25°C (Tj) and a maximum power dissipation of 1.3W (Ta). The Rds On is specified at a maximum of 25mOhm under 5.4A and 4.5V gate-source voltage. Drive voltages range from 1.8V to 4.5V for optimal Rds On performance. Key electrical characteristics include a gate charge (Qg) of 30 nC at 4.5V and an input capacitance (Ciss) of 2400 pF at 6.4V. The device is supplied in Tape & Reel (TR) packaging, suitable for surface mount applications. This MOSFET is utilized in various industries requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 6.4 V |
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