NTHL095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SuperFET® III N-Channel Power MOSFET, NTHL095N65S3H. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A (Tc) at 25°C. The Rds On is specified at a maximum of 95mOhm at 15A and 10V gate-source voltage. With a gate charge (Qg) of 58 nC (max) at 10 V and input capacitance (Ciss) of 2833 pF (max) at 400 V, this MOSFET is designed for efficient power switching. The maximum power dissipation is 208W (Tc). The component is housed in a TO-247-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device is utilized in applications such as power supplies, industrial motor drives, and renewable energy systems.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.8mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2833 pF @ 400 V |
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