NTHL080N120SC1
SICFET N-CH 1200V 44A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHL080N120SC1 is an N-Channel SiCFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) capability of 44A at 25°C. The Rds On is specified at a maximum of 110mOhm at 20A and 20V gate drive. With a maximum power dissipation of 348W (Tc), it offers efficient operation. Key parameters include a gate charge (Qg) of 56 nC at 20V and input capacitance (Ciss) of 1670 pF at 800V. The NTHL080N120SC1 is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is suitable for power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 348W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V |
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