NTHD5904NT1G
MOSFET N-CH 20V 2.5A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHD5904NT1G is an N-Channel MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A at 25°C. With a maximum power dissipation of 640mW (Ta), it offers a low Rds(on) of 65mOhm at 3.3A and 4.5V. Key characteristics include a gate charge (Qg) of 6 nC at 4.5V and an input capacitance (Ciss) of 465 pF at 16V. This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Available in an 8-SMD, Flat Leads ChipFET™ package, it is supplied on tape and reel. The NTHD5904NT1G is suitable for use in consumer electronics and power management applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 640mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 16 V |
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