NTHD5904NT1
MOSFET N-CH 20V 2.5A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTHD5904NT1 is an N-Channel MOSFET designed for efficient power switching applications. This ChipFET™ device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 2.5A at 25°C, with a maximum power dissipation of 640mW (Ta). The NTHD5904NT1 exhibits a low on-resistance (Rds On) of 65mOhm at 3.3A and 4.5V, with typical gate charge (Qg) of 6 nC at 4.5V. It supports gate drive voltages from 2.5V to 4.5V, with a maximum Vgs of ±8V. The input capacitance (Ciss) is rated at a maximum of 465 pF at 16V. This surface mount component is supplied in Tape & Reel (TR) packaging, utilizing the 8-SMD, Flat Leads ChipFET™ package. Operating over an extended temperature range of -55°C to 150°C (TJ), the NTHD5904NT1 is suitable for use in portable electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 640mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 16 V |
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