NTHD4P02FT1G
MOSFET P-CH 20V 2.2A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHD4P02FT1G is a P-Channel MOSFET designed for demanding applications. This ChipFET™ component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.2A at 25°C. With a maximum Rds(on) of 155mOhm at 2.2A and 4.5V gate-source voltage, it offers efficient power handling. The device incorporates an isolated Schottky diode, enhancing its functionality. Key parameters include a gate charge (Qg) of 6 nC at 4.5V and an input capacitance (Ciss) of 300 pF at 10V. Operating across a temperature range of -55°C to 150°C (TJ), the NTHD4P02FT1G is housed in an 8-SMD, flat leads package suitable for surface mounting. Its power dissipation is rated at 1.1W (Tj). This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tj) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Tj) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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