NTHD4N02FT1G
MOSFET N-CH 20V 2.9A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTHD4N02FT1G is an N-Channel MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage and can handle a continuous drain current of 2.9A at 25°C. The Rds(On) is specified at a maximum of 80mOhm at 2.9A and 4.5V Vgs. It includes an integrated Schottky diode for improved performance. The MOSFET operates with a gate-source voltage range of ±12V, and a threshold voltage of 1.2V at 250µA. Key parameters include a gate charge of 4nC at 4.5V Vgs and input capacitance of 300pF at 10V Vds. The device is packaged in a ChipFET™ (8-SMD, Flat Leads) for surface mount assembly and is supplied on tape and reel. The maximum power dissipation is 910mW (TJ), with a rated operating temperature range of -55°C to 150°C. This component is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 910mW (Tj) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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