NTHD3133PFT3G
MOSFET P-CH 20V 3.2A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHD3133PFT3G is a P-Channel MOSFET designed for efficient power management applications. This component features a 20V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 3.2A at 25°C. With a low on-resistance (Rds On) of 80mOhm at 3.2A and 4.5V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 7.4 nC at 4.5V and an input capacitance (Ciss) of 680 pF at 10V.
This MOSFET supports drive voltages from 1.8V to 4.5V and has a threshold voltage (Vgs(th)) of 1.5V at 250µA. The NTHD3133PFT3G includes an isolated Schottky diode, enhancing its versatility. It is housed in an 8-SMD, Flat Leads ChipFET™ package for surface mounting and operates across a wide temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 1.1W (Ta). This component is suitable for use in consumer electronics, computing, and industrial sectors. The NTHD3133PFT3G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tj) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
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