NTHD3133PFT1G
MOSFET P-CH 20V 3.2A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTHD3133PFT1G is a P-Channel MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.2A at 25°C (Tj). The Rds(on) is specified at a maximum of 80mOhm at 3.2A and 4.5V Vgs. It incorporates a Schottky diode for enhanced performance. The NTHD3133PFT1G is housed in an 8-SMD, Flat Leads ChipFET™ package, suitable for surface mounting. Key parameters include Gate Charge (Qg) of 7.4 nC at 4.5V Vgs and Input Capacitance (Ciss) of 680 pF at 10V Vds. The component operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.1W (Ta). This MOSFET is commonly utilized in consumer electronics and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tj) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
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