NTHD2110TT1G
MOSFET P-CH 12V 4.5A CHIPFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTHD2110TT1G is a P-Channel MOSFET designed for surface mount applications. This ChipFET™ component features a drain-to-source voltage (Vdss) of 12 V and a continuous drain current (Id) of 4.5 A at 25°C with a power dissipation of 1.1 W. Key electrical characteristics include a maximum Rds(on) of 40 mOhm at 6.4 A and 4.5 V, with a gate threshold voltage (Vgs(th)) of 850 mV at 250 µA. It operates with drive voltages between 1.8 V and 4.5 V, and has a maximum gate-source voltage (Vgs) of ±8 V. The component exhibits a gate charge (Qg) of 14 nC and input capacitance (Ciss) of 1072 pF. The NTHD2110TT1G is packaged in an 8-SMD, Flat Leads configuration on tape and reel. This device is suitable for use in various industrial and consumer electronics applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1072 pF @ 6 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
