NTH4L095N065SC1
SIC MOS TO247-4L 650VManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTH4L095N065SC1 is a 650V N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. This device features a continuous drain current rating of 31A (Tc) and a maximum power dissipation of 129W (Tc). The Rds(On) is specified at a maximum of 105mOhm at 12A and 18V gate drive. Key parameters include a gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 956 pF @ 325V. The TO-247-4 package facilitates through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This SiC MOSFET is suitable for demanding power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 12A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 129W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 4mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 956 pF @ 325 V |
| Qualification | - |
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