NTH4L020N090SC1
SILICON CARBIDE MOSFET, NCHANNELManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 484W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -8V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4415 pF @ 450 V |
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