NTH4L018N075SC1
SIC MOS TO247-4L 750VManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTH4L018N075SC1 is a 750V N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This component features a low on-resistance of 18mOhm at 66A and 18V, coupled with a continuous drain current capability of 140A at 25°C. With a maximum power dissipation of 500W (Tc), it is suitable for high-power density designs. The device utilizes a TO-247-4 package, offering robust thermal performance and ease of mounting in through-hole configurations. Key parameters include a gate charge (Qg) of 262 nC at 18V and input capacitance (Ciss) of 5010 pF at 375V. The operating junction temperature range is -55°C to 175°C. This SiC MOSFET is employed in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 66A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 22mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -8V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 262 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5010 pF @ 375 V |
| Qualification | - |
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