NTH4L013N120M3S
DISCRETE SIC M3S 1200V 13MOHMManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 151A (Tc) 682W (Tc) Through Hole TO-247-4
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 151A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 75A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 682W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 37mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 254 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5813 pF @ 800 V |
| Qualification | - |
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