NTGS4111PT2G
MOSFET P-CH 30V 2.6A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS4111PT2G is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.6 A at 25°C. With a maximum Rds(On) of 60 mOhm at 3.7 A and 10 V gate drive, it offers low conduction losses. The device is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 32 nC at 10 V and input capacitance (Ciss) of 750 pF at 15 V. Its maximum power dissipation is 630 mW at 25°C. This MOSFET is utilized across various industries including automotive, industrial automation, and consumer electronics. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 630mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |
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