NTGS3447PT1G
MOSFET P-CH 12V 3.4A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3447PT1G is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 12 V and a continuous drain current (Id) capability of 3.4 A at 25°C. Its low on-resistance (Rds On) of 40 mOhm at 4.7 A and 4.5 V gate-source drive makes it suitable for demanding power management tasks. The NTGS3447PT1G operates with gate drive voltages between 1.8 V and 4.5 V, with a maximum gate-source voltage (Vgs) limit of ±8 V. With a maximum power dissipation of 700 mW (Ta), this MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) package, ideal for surface mounting. Typical applications for this component include consumer electronics, industrial automation, and battery management systems. It offers a gate charge (Qg) of 15 nC at 4.5 V and an input capacitance (Ciss) of 1053 pF at 6 V. The operating temperature range for the NTGS3447PT1G is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1053 pF @ 6 V |
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