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NTGS3447PT1G

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NTGS3447PT1G

MOSFET P-CH 12V 3.4A 6TSOP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTGS3447PT1G is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 12 V and a continuous drain current (Id) capability of 3.4 A at 25°C. Its low on-resistance (Rds On) of 40 mOhm at 4.7 A and 4.5 V gate-source drive makes it suitable for demanding power management tasks. The NTGS3447PT1G operates with gate drive voltages between 1.8 V and 4.5 V, with a maximum gate-source voltage (Vgs) limit of ±8 V. With a maximum power dissipation of 700 mW (Ta), this MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) package, ideal for surface mounting. Typical applications for this component include consumer electronics, industrial automation, and battery management systems. It offers a gate charge (Qg) of 15 nC at 4.5 V and an input capacitance (Ciss) of 1053 pF at 6 V. The operating temperature range for the NTGS3447PT1G is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 4.7A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1053 pF @ 6 V

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