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NTGS3446T1

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NTGS3446T1

MOSFET N-CH 20V 2.5A 6TSOP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTGS3446T1 is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-Source Voltage (Vds) of 20 V and a continuous Drain Current (Id) of 2.5 A at 25°C ambient temperature, with a maximum power dissipation of 500 mW. The Rds On is specified as a maximum of 45 mOhm at 5.1 A and 4.5 V. Key parameters include a Gate Charge (Qg) of 15 nC at 4.5 V and an Input Capacitance (Ciss) of 750 pF at 10 V. It supports gate drive voltages from 2.5 V to 4.5 V, with a maximum Gate-Source Voltage (Vgs) of ±12 V, and a threshold voltage (Vgs(th)) of 1.2 V at 250 µA. The device is housed in a 6-TSOP package and operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management and switching applications across various industries.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 5.1A, 4.5V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 10 V

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