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NTGS3443T2G

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NTGS3443T2G

MOSFET P-CH 20V 2.2A 6TSOP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTGS3443T2G is a P-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C, with a maximum power dissipation of 500mW (Ta). The Rds(On) is specified at a maximum of 65mOhm at 4.4A and 4.5V gate-source voltage. Gate drive is flexible, with specified performance at 2.5V and 4.5V. Key parameters include a gate charge (Qg) of 15 nC at 4.5V and input capacitance (Ciss) of 565 pF at 5V. The NTGS3443T2G is housed in a 6-TSOP package (SOT-23-6 Thin) and is supplied on tape and reel. This component is suitable for use in power management, battery charging circuits, and automotive applications. It operates across a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 4.4A, 4.5V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds565 pF @ 5 V

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