NTGS3443T1
MOSFET P-CH 20V 2.2A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3443T1 is a P-channel MOSFET designed for high-efficiency power management applications. Featuring a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.2 A at 25°C, this device offers a low on-resistance of 65 mOhm at 4.4 A and 4.5 Vgs. The MOSFET utilizes advanced Metal Oxide technology for optimal performance. It is supplied in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 15 nC at 4.5 V and input capacitance (Ciss) of 565 pF at 5 V. The device operates reliably across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 500 mW (Ta). This component is frequently utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 5 V |
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