NTGS3443BT1G
MOSFET P-CH 20V 2.7A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTGS3443BT1G is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.7A at 25°C ambient. The Rds(On) is specified at a maximum of 60mOhm when drawing 3.7A with a 4.5V gate-source voltage. With a Gate Charge (Qg) of 11nC at 4.5V, it offers excellent switching performance. The component is housed in a compact 6-TSOP (SOT-23-6 Thin) surface mount package, dissipating a maximum of 700mW at 25°C ambient. Typical applications for this MOSFET include battery management, power supply circuits, and portable electronics. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 819 pF @ 10 V |
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