NTGS3441T1
MOSFET P-CH 20V 1.65A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3441T1 is a P-channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.65A at 25°C. With a maximum power dissipation of 500mW (Ta), it is suitable for surface mount applications utilizing the 6-TSOP package. The NTGS3441T1 exhibits a low Rds On of 90mOhm at 3.3A and 4.5V. Key parameters include a Gate Charge (Qg) of 14 nC at 4.5V and an Input Capacitance (Ciss) of 480 pF at 5V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET finds application in various industries including industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.65A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 5 V |
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