NTGS3441PT1G
MOSFET P-CH 20V 1.8A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3441PT1G is a P-Channel MOSFET designed for power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.8A at 25°C with a maximum power dissipation of 510mW. The Rds On is specified at a maximum of 110mOhm at 3A and 4.5V Vgs, with drive voltages available at 2.5V and 4.5V. Key parameters include a Gate Charge (Qg) of 6 nC at 4.5V and an Input Capacitance (Ciss) of 345 pF at 15V. The NTGS3441PT1G is housed in a compact 6-TSOP surface mount package and operates within an extended temperature range of -55°C to 150°C. This component is suitable for use in various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 345 pF @ 15 V |
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