NTGS3441BT1G
MOSFET P-CH 20V 2.2A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTGS3441BT1G is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) capability of 2.2 A at 25°C ambient. With a maximum Rds On of 90 mOhm at 3 A and 4.5 V Vgs, it offers efficient power switching. The device is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 9 nC at 4.5 V and an Input Capacitance (Ciss) of 630 pF at 10 V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in various industries including automotive and industrial automation. Its low power dissipation of 700mW (Ta) further enhances its suitability for compact designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
