NTGS3433T1G
MOSFET P-CH 12V 2.35A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3433T1G is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) capability of 2.35A at 25°C, with a maximum power dissipation of 500mW (Ta). The on-resistance (Rds On) is specified at a maximum of 75mOhm when driven at 3.3A and 4.5V.
Key parameters include a gate charge (Qg) of 15 nC (Max) at 4.5V and input capacitance (Ciss) of 550 pF (Max) at 5V. The MOSFET utilizes Metal Oxide technology and is available in a 6-TSOP package, suitable for surface mounting. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power management, battery charging, and consumer electronics sectors. The NTGS3433T1G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.35A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 5 V |
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