NTGS3130NT1G
MOSFET N-CH 20V 4.23A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS3130NT1G is an N-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 4.23A at 25°C ambient. With a low Rds(on) of 24mOhm at 4.5V gate-source voltage and 5.6A drain current, it minimizes conduction losses. The NTGS3130NT1G is packaged in a compact 6-TSOP (SOT-23-6 Thin) surface-mount configuration, suitable for space-constrained designs. Key electrical parameters include a gate charge (Qg) of 20.3 nC at 4.5V and input capacitance (Ciss) of 935 pF at 16V. Its operating temperature range is -55°C to 150°C. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.23A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 935 pF @ 16 V |
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