NTGS1135PT1G
MOSFET P-CH 8V 4.6A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGS1135PT1G is a P-Channel MOSFET designed for efficient switching applications. It features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 4.6A at 25°C, with a maximum power dissipation of 970mW. The device offers a low ON-resistance of 31mOhm at 4.6A and 4.5V Vgs. This MOSFET utilizes advanced Metal Oxide technology for optimal performance. The NTGS1135PT1G is supplied in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 21 nC at 4.5V and an Input Capacitance (Ciss) of 2200 pF at 6V. Operating temperature ranges from -55°C to 150°C. This component is commonly found in power management and signal switching within the consumer electronics and industrial automation sectors. The part is delivered on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 970mW (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 6 V |
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