NTGD4169FT1G
MOSFET N-CH 30V 2.6A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGD4169FT1G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 2.6A at 25°C. It offers a low on-resistance (Rds On) of 90mOhm maximum at 2.6A and 4.5V Vgs. The device is packaged in a compact 6-TSOP (SOT-23-6 Thin) for surface mounting. Key specifications include a Gate Charge (Qg) of 5.5 nC maximum at 4.5 V and an Input Capacitance (Ciss) of 295 pF maximum at 15 V. It also incorporates an isolated Schottky diode. This MOSFET is suitable for power management and switching applications across various industries including automotive and industrial automation. The maximum power dissipation is rated at 900mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 15 V |
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