NTGD3147FT1G
MOSFET P-CH 20V 2.2A 6TSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTGD3147FT1G is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 2.2 A at 25°C. The Rds On is specified at a maximum of 145 mOhm at 2.2 A and 4.5 V gate drive. Key parameters include a Gate Charge (Qg) of 5.5 nC at 4.5 V and an Input Capacitance (Ciss) of 400 pF at 10 V. This device incorporates an isolated Schottky diode for enhanced performance. It is housed in a 6-TSOP package suitable for surface mounting and operates across a temperature range of -25°C to 150°C. The NTGD3147FT1G is utilized in various industries, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 2.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |